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| 型号： | FDMS8880 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 13.5A POWER56 |
| 产品变化通告： | Power 56 Pkg/Design Change 24/Nov/2009 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.5 毫欧 @ 13.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 33nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1585pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDMS8880DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 A, V GS = 0 V
I D = 250 A, referenced to 25 °C
V DS = 24 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
30
19
1
±100
V
mV/°C
A
nA
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 A
I D = 250 A, referenced to 25 °C
1.2
1.9
-7
2.5
V
mV/°C
V GS = 10 V, I D = 13.5 A
6.3
8.5
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 10.9 A
9.0
13.0
m
V GS = 10 V, I D = 13.5 A, T J = 125 °C
9.6
13.0
g FS
Forward Transconductance
V DD = 10 V, I D = 13.5 A
78
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
1195
234
161
0.9
1585
315
245
1.8
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
9
18
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 15 V, I D = 13.5 A,
V GS = 10 V, R GEN = 6
V GS = 0 V to 10 V
6
23
4
23
12
27
10
33
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to 5 V
V DD = 15 V,
I D = 13.5 A
13
3.5
18
nC
nC
Q gd
Gate to Drain “Miller” Charge
5.1
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 2.1 A
V GS = 0 V, I S = 13.5 A
(Note 2)
(Note 2)
0.74
0.84
1.2
1.2
V
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 13.5 A, di/dt = 100 A/ s
20
8
32
16
ns
nC
NOTES:
1. R JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
CA is
determined by
the user's board design.
a. 50 °C/W when mounted on
a 1 in 2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3.Starting T J = 25 ° C, L = 0.3 mH, I AS = 19 A, V DD = 27 V, V GS = 10 V.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
?2009 Fairchild Semiconductor Corporation
FDMS8880 Rev.C1
2
www.fairchildsemi.com
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