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| 型号： | FDMS86500DC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 60V 29A 8-PQFN |
| 标准包装： | 1 |
| 系列： | Dual Cool™, PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 29A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.3 毫欧 @ 29A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 107nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7680pF @ 30V |
| 功率 - 最大： | 3.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（5X6），Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS86500DCFSDKR |
July 2013
FDMS86500DC
N-Channel Dual Cool TM Power Trench ? MOSFET
60 V, 108 A, 2.3 m Ω
Features
General Description
Dual
Cool TM
Top Side Cooling PQFN package
This N-Channel MOSFET is produced using Fairchild
Max r DS(on) = 2.3 m Ω at V GS = 10 V, I D = 29 A
Max r DS(on) = 3.3 m Ω at V GS = 8 V, I D = 24 A
High performance technology for extremely low r DS(on)
100% UIL Tested
RoHS Compliant
Semiconductor’s advanced Power Trench ? process.
Advancements in both silicon and Dual Cool TM package
technologies have been combined to offer the lowest r DS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
D
D
D
S
D
Pin 1
S
D
S
D
G
S
S
S
Pin 1
S
G
D
D
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
60
±20
Units
V
V
Drain Current
-Continuous
T C = 25 °C
108
I D
-Continuous
T A = 25 °C
(Note 1a)
29
A
-Pulsed
200
E AS
Single Pulse Avalanche Energy
(Note 3)
317
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
125
3.2
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Top Source)
(Bottom Drain)
(Note 1a)
2.8
1.0
38
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
81
16
23
11
°C/W
Package Marking and Ordering Information
Device Marking
86500
Device
FDMS86500DC
Package
Dual Cool TM Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C3
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS86500L | 功能描述:MOSFET 60V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86500L_F142 | 功能描述:MOSFET 60V N-Chan PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86500L-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDMS86500L Series 60 V 49 A 2.5 mOhm N-Channel PowerTrench?MOSFET-POWER-56 |
| FDMS86520 | 功能描述:MOSFET 60V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86520L | 功能描述:MOSFET 60V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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