参数资料
型号: FDN339AN
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: N-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SUPERSOT-3
文件页数: 1/8页
文件大小: 259K
代理商: FDN339AN
F
FDN339AN Rev. C
FDN339AN
N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Load switch
November 1999
Features
3 A, 20 V. R
DS(ON)
= 0.035
@ V
GS
= 4.5 V
R
DS(ON)
= 0.050
@ V
GS
= 2.5 V.
Low gate charge (7nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
20
±
8
3
20
0.5
0.46
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
339
Device
FDN339AN
Reel Size
7
’’
Tape Width
8mm
Quantity
3000 units
G
S
D
G
D
S
SuperSOT -3
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