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参数资料
| 型号： | FDN352AP |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single P-Channel, PowerTrench |
| 中文描述： | 1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 118K |
| 代理商： | FDN352AP |
2005 Fairchild Semiconductor Corporation
FDN352AP Rev. C
1
www.fairchildsemi.com
April 2005
F
FDN352AP
Single P-Channel, PowerTrench
MOSFET
Features
■
–1.3 A, –30V
–1.1 A, –30V
High performance trench technology for extremely low
R
DS(ON)
.
High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling
capability.
R
R
DS(ON)
DS(ON)
= 180 m
= 300 m
@ V
@ V
GS
GS
= –10V
= –4.5V
■
■
Applications
■
Notebook computer power management
General Description
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power Trench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
–30
V
V
GSS
Gate-Source Voltage
±
25
V
I
D
Drain Current
– Continuous
(Note 1a)
–1.3
A
– Pulsed
–10
P
D
Power Dissipation for Single Operation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
75
Device Marking
Device
Reel Size
Tape width
Quantity
52AP
FDN352AP
7’’
8mm
3000 units
G
SuperSOT-3
S
D
D
G
S
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|---|---|
| FDN357N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN358 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN358P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN359BN | N-Channel Logic Level PowerTrench TM MOSFET |
| FDN359 | N-Channel Logic Level PowerTrenchTM MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN352AP_0508 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, PowerTrench MOSFET |
| FDN352AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN352AP Series 30 V 180 mOhm Single P-Channel PowerTrench Mosfet SSOT-3 |
| FDN357N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 60 MO SSOT3 |
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