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参数资料
| 型号： | FDN352AP |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single P-Channel, PowerTrench |
| 中文描述： | 1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 118K |
| 代理商： | FDN352AP |
3
www.fairchildsemi.com
FDN352AP Rev. C
F
Typical Characteristics
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
=-10V
-4.5V
-3.5V
-3.0V
-6.0V
-4.0V
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
=-4.0V
-10V
-6.0V
-5.0V
-7.0V
-4.5V
-8.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -0.9A
V
GS
= -10V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -0.45A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
1
2
3
4
5
6
7
8
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN352AP_0508 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, PowerTrench MOSFET |
| FDN352AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN352AP Series 30 V 180 mOhm Single P-Channel PowerTrench Mosfet SSOT-3 |
| FDN357N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 60 MO SSOT3 |
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