参数资料
型号: FDN352AP
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: Single P-Channel, PowerTrench
中文描述: 1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SUPERSOT-3, 3 PIN
文件页数: 4/5页
文件大小: 118K
代理商: FDN352AP
4
www.fairchildsemi.com
FDN352AP Rev. C
F
Typical Characteristics
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
0
2
4
6
8
10
0
0.5
1
Q
g
, GATE CHARGE (nC)
1.5
2
2.5
3
-
G
,
I
D
= -0.9A
V
DS
= -10V
-20V
-15V
0
50
100
150
200
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
JA
= 270
o
C/W
T
A
= 25
o
C
10ms
1ms
100
μ
s
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
P
SINGLE PULSE
R
JA
= 270
°
C/W
T
A
= 25
°
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
θ
θ
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 270
°
C/W
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
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相关代理商/技术参数
参数描述
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