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参数资料
| 型号： | FDN352AP |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single P-Channel, PowerTrench |
| 中文描述： | 1300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 118K |
| 代理商： | FDN352AP |
2
www.fairchildsemi.com
FDN352AP Rev. C
F
Notes:
1. R
surface of the drain pins. R
(a) R
θ
JA
= 250°C/W when mounted on a 0.02 in
(b) R
θ
JA
= 270°C/W when mounted on a 0.001 in
2. Pulse Test: Pulse Width < 300
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
2
pad of 2oz. copper.
2
pad of 2oz. copper.
μ
s, Duty Cycle < 2.0%
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= –250
= 0 V, I
D
A, Referenced to 25
= –250
μ
A
–30
V
DSS
J
Breakdown Voltage Temperature Coefficient
I
D
μ
°
C
–17
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –24 V, V
GS
= 0 V
–1
μ
A
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
=
±
25V, V
DS
= 0 V
±
100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= –250
= V
GS
, I
D
= –250
μ
A
–0.8
–2.0
–2.5
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
μ
A, Referenced to 25
°
C
4
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
= –10 V, I
= –4.5 V, I
= –4.5 V, I
D
D
D
= –0.9 A
= –1.3 A
= –1.1 A
= –1.1 A, T
J
= 125
°
C
150
250
330
180
300
400
m
g
FS
Forward Transconductance
V
DS
= –5 V, I
D
2.0
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= –15 V, V
GS
= 0 V, f = 1.0 MHz
150
pF
C
oss
Output Capacitance
40
pF
C
rss
Reverse Transfer Capacitance
20
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= –10 V, I
= –10 V, R
D
= –1 A,
= 6
GEN
4
8
ns
t
r
Turn–On Rise Time
15
28
ns
t
d(off)
Turn–Off Delay Time
10
18
ns
t
f
Turn–Off Fall Time
1
2
ns
Q
g
Total Gate Charge
V
V
DS
GS
= –10V, I
= –4.5 V
D
= –0.9 A,
1.4
1.9
nC
Q
gs
Gate–Source Charge
0.5
nC
Q
gd
Gate–Drain Charge
0.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
–0.42
A
V
SD
Drain–Source Diode Forward Voltage
V
GS
= –3.9 A,
dI
F
/dt = 100 A/μs
= 0 V, I
S
= –0.42 A (Note 2)
–0.8
–1.2
V
t
rr
Diode Reverse Recovery Time
I
F
17
ns
Q
rr
Diode Reverse Recovery Charge
7
nC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN352AP_0508 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, PowerTrench MOSFET |
| FDN352AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN352AP Series 30 V 180 mOhm Single P-Channel PowerTrench Mosfet SSOT-3 |
| FDN357N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 60 MO SSOT3 |
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