参数资料
型号: FDN339AN
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: N-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SUPERSOT-3
文件页数: 4/8页
文件大小: 259K
代理商: FDN339AN
F
FDN339AN Rev. C
Typical Characteristics
(continued)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270
°
C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0
200
400
600
800
1000
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0
0.0001
4
8
12
16
20
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
=270
o
C/W
T
A
=25
o
C
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
TA = 25
o
C
DC
10s
100ms
10ms
1ms
1s
R
DS(ON)
LIMIT
0
1
2
3
4
5
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 3A
V
DS
= 5V
10V
15V
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相关代理商/技术参数
参数描述
FDN339AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
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FDN3400 制造商:Fairchild Semiconductor Corporation 功能描述: