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| 型号： | FDN340P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Wire Bonding Change 07/Nov/2008 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 779pF @ 10V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN340PDKR |
September 200
February 2007
FDN340P
Single P-Channel,Logic Level,PowerTrench ? MOSFET
GeneralDescription
Features
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
? –2A,20 V
R DS(ON) = 70 m ? @ V GS = –4.5 V
R DS(ON) = 110 m ? @ V GS = –2.5 V
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications:load switching and power management,
batterycharging circuits,and DC/DC conversion.
? Low gate charge (7.2 nC typical).
? Highperformance trench technology for extremely
low R DS(ON) .
? High power version ofindustryStandard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
G
S
Absolute Maxim um Ratings
T A =25 o C unlessotherwise noted
Sym bol
V DSS
V GSS
Param eter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–20
± 8
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–2
A
– Pulsed
–10
P D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.5
0.46
W
T J ,T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Therm alCharacteristics
R θ JA
R θ J C
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
(Note 1a)
(Note 1)
250
75
° C/W
° C/W
Package Marking and Ordering Inform ation
Device M arking
340
Device
FDN340P
ReelSize
7’’
Tape width
8mm
Quantity
3000 units
? 200 7 Fairchild Semiconductor Corporation
FDN340P Rev E 1
相关PDF资料 |
PDF描述 |
|---|---|
| FDN342P | MOSFET P-CH 20V 2A SSOT-3 |
| FDN352AP | MOSFET P-CH 30V 1.3A SSOT-3 |
| FDN357N | MOSFET N-CH 30V 1.9A SSOT3 |
| FDN358P | MOSFET P-CH 30V 1.5A SSOT3 |
| FDN359BN | MOSFET N-CH 30V 2.7A 3SSOT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN340P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN340P_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, Logic Level, PowerTrench?MOSFET |
| FDN340P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN340P Series 20V 70 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-3 |
| FDN342P | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN342P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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