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| 型号： | FDN359BN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.7A 3SSOT |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 2.7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 650pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 其它名称： | FDN359BNFSDKR |
January 2006
FDN359BN
N-Channel Logic Level PowerTrench TM MOSFET
General Description
Features
? 2.7 A, 30 V.
R DS(ON) = 0.046 ? @ V GS = 10 V
This N-Channel Logic Level MOSFET is produced
using Fairchild’s Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D
S
R DS(ON) = 0.060 ? @ V GS = 4.5 V
? Very fast switching speed.
? Low gate charge (5nC typical)
? High performance version of industry standard
SOT-23 package. Identical pin out to SOT-23 with 30%
higher power handling capability.
D
G
S
SuperSOT -3
TM
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
V
I D
Maximum Drain Current – Continuous
(Note 1a)
2.7
A
– Pulsed
15
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J , T STG
Operating and Storage Temperature Range
? 55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
359B
Device
FDN359BN
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2006 Fairchild Semiconductor Corporation
FDN359BN Rev A(W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDN360P | MOSFET P-CH 30V 2A SSOT3 |
| FDN361BN | MOSFET N-CH 30V 1.4A SSOT3 |
| FDN372S | MOSFET N-CH 30V 2.6A SSOT-3 |
| FDN5618P | MOSFET P-CH 60V 1.25A SSOT3 |
| FDN5630 | MOSFET N-CH 60V 1.7A SSOT3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN359BN"F095 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 0.026OHM 2.7A SUPER 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.026OHM, 2.7A, SUPER |
| FDN359BN_F095 | 功能描述:MOSFET 30V NCh; PowerTrench AU Wire Parts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359BN-F095 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN360 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel PowerTrenchTM MOSFET |
| FDN360P | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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