参数资料
型号: FDN359BN
厂商: Fairchild Semiconductor
文件页数: 2/6页
文件大小: 0K
描述: MOSFET N-CH 30V 2.7A 3SSOT
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 2.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 46 毫欧 @ 2.7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 7nC @ 5V
输入电容 (Ciss) @ Vds: 650pF @ 15V
功率 - 最大: 460mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: 3-SSOT
包装: 标准包装
其它名称: FDN359BNFSDKR
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A,Referenced to 25 ° C
21
mV/ ° C
I DSS
Zero Gate Voltage Drain Current
V DS = 24 V,
V GS = 0 V
1
μ A
T J = -55 C
O
10
μ A
I GSS
Gate–Body Leakage
V GS = ± 20 V,
V DS = 0 V
± 100
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
V GS = 10 V, I D = 2.7 A
1
1.8
–4
0.026
3
0.046
V
mV/ ° C
?
On–Resistance
V GS = 4.5 V, I D = 2.4 A
V GS = 10 V, I D = 2.7 A, T J = 125 ° C
0.032
0.033
0.060
0.075
I D(on)
On–State Drain Current
V GS = 10 V, V DS = 5 V
15
A
g FS
Forward Transconductance
V DS = 5V,
I D = 2.7 A
11
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
f = 1.0 MHz
V GS = 0 V,
485
105
65
1.8
650
140
100
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15V,
V GS = 10 V,
V DS = 15 V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 2.7 A,
7
5
20
2
5
1.3
14
10
35
4
7
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
1.8
nC
FDN359BN Rev A(W)
相关PDF资料
PDF描述
FDN360P MOSFET P-CH 30V 2A SSOT3
FDN361BN MOSFET N-CH 30V 1.4A SSOT3
FDN372S MOSFET N-CH 30V 2.6A SSOT-3
FDN5618P MOSFET P-CH 60V 1.25A SSOT3
FDN5630 MOSFET N-CH 60V 1.7A SSOT3
相关代理商/技术参数
参数描述
FDN359BN"F095 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 0.026OHM 2.7A SUPER 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.026OHM, 2.7A, SUPER
FDN359BN_F095 功能描述:MOSFET 30V NCh; PowerTrench AU Wire Parts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDN359BN-F095 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrenchTM MOSFET
FDN360 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel PowerTrenchTM MOSFET
FDN360P 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube