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| 型号： | FDN360P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 298pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN360PDKR |
May 2003
FDN360P
Single P-Channel, PowerTrench ? MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
? –2 A, –30 V.
R DS(ON) = 80 m ? @ V GS = –10 V
R DS(ON) = 125 m ? @ V GS = –4.5 V
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D
S
? Low gate charge (6.2 nC typical)
? High performance trench technology for extremely
low R DS(ON) .
? High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
G
S
SuperSOT -3
TM
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–2
A
– Pulsed
–10
P D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.5
0.46
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
360
Device
FDN360P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2003 Fairchild Semiconductor Corporation
FDN360P Rev F1 (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDN361BN | MOSFET N-CH 30V 1.4A SSOT3 |
| FDN372S | MOSFET N-CH 30V 2.6A SSOT-3 |
| FDN5618P | MOSFET P-CH 60V 1.25A SSOT3 |
| FDN5630 | MOSFET N-CH 60V 1.7A SSOT3 |
| FDP020N06B | MOSFET N-CH 60V 120A TO-220-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN360P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN360P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN360P Series 30 V 80 mOhm Single P-Channel PowerTrench Mosfet - SSOT-3 |
| FDN361 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN361AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
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