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| 型号： | FDN5630 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 1.7A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Wire Bonding Change 07/Nov/2008 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 1.7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN5630DKR |
March 2000
FDN5630
60V N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low R DS(ON) in a small SOT23
footprint. Fairchild’s PowerTrench technology provides
faster switching than other MOSFETs with comparable
R DS(ON) specifications. The result is higher overall
efficiency with less board space.
Applications
?
DC/DC converter
?
Motor drives
D
S
?
?
?
?
?
1.7 A, 60 V. R DS(ON) = 0.100 ? @ V GS = 10 V
R DS(ON) = 0.120 ? @ V GS = 6 V.
Optimized for use in high frequency DC/DC converters.
Low gate charge.
Very fast switching.
SuperSOT TM - 3 provides low R DS(ON) in SOT23 footprint.
D
SuperSOT -3
TM
G
G
S
Absolute Maximum Ratings
T A = 25 C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
60
± 20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
1.7
A
- Pulsed
10
P D
Power Dissipation for Single Operation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
5630
Device
FDN5630
Reel Size
7
Tape Width
8mm
Quantity
3000 units
? 2000 Fairchild Semiconductor Corporation
FDN5630 Rev. C
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN5630 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN5630N | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:SuperSOT -3 |
| FDN5632N | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN5632N_F085 | 功能描述:MOSFET Trans MOS N-Ch 60V 1.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-N8 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ECONOMY 2M FREE-CU |
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