- 您现在的位置：买卖IC网 > Datasheet目录423 > FDP027N08B (Fairchild Semiconductor)MOSFET N-CH 80V 223A TO-220-3 Datasheet资料下载
参数资料
| 型号： | FDP027N08B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 223A TO-220-3 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.7 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 178nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 13530pF @ 40V |
| 功率 - 最大： | 246W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
November 2013
FDP027N08B
N-Channel PowerTrench ? MOSFET
80 V, 223 A, 2.7 m Ω
Features
? R DS(on) = 2.21 m Ω ( Typ.) @ V GS = 10 V, I D = 100 A
? Low FOM R DS(on) * Q G
? Low Reverse-Recovery Charge, Q rr = 112 nC
? Soft Reverse-Recovery Body Diode
? Enables High Efficiency in Synchronous Rectification
? Fast Switching Speed
? 100% UIL Tested
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor ’s PowerTrench ? process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
D
GD
S
TO-220
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP027N08B_F102
80
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
±20
223*
158*
120
V
A
I DM
Drain Current
- Pulsed
(Note 1)
892
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
917
6.0
246
1.64
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300
o
o
C
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A.
Thermal Characteristics
Symbol
Parameter
FDP027N08B_F102
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.61
62.5
o
C/W
?2011 Fairchild Semiconductor Corporation
FDP027N08B Rev. C4
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDP030N06 | MOSFET N-CH 60V 120A TO220 |
| FDP032N08 | MOSFET N-CH 75V 120A TO-220 |
| FDP036N10A | MOSFET N-CH 100V TO-220AB-3 |
| FDP040N06 | MOSFET N-CH 60V 120A TO220 |
| FDP045N10A | MSOFET N-CH 100V TO-220-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP027N08B_F102 | 功能描述:MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP030N06 | 功能描述:MOSFET NCH 60V 3.0Mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP030N06B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 195A, 3.1m |
| FDP030N06B_F102 | 制造商:Fairchild Semiconductor Corporation 功能描述:PT7 60V 2.5MOHM TO-220 - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 120A TO-220-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / PT7 60V 2.5MOHM TO-220 |
| FDP032N08 | 功能描述:MOSFET 75V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。