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参数资料
| 型号： | FDP027N08B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 223A TO-220-3 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.7 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 178nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 13530pF @ 40V |
| 功率 - 最大： | 246W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FDP027N08B_F102
Top Mark
FDP027N08B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V
80
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 64 V, V GS = 0 V
V DS = 64 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
25 o C
-
-
-
-
0.05
-
-
-
-
1
500
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 100 A
V DS = 10 V, I D = 100 A
2.5
-
-
-
2.21
227
4.5
2.7
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss (er)
Q g(tot)
Q gs
Q gs2
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 40 V, V GS = 0 V,
f = 1 MHz
V DS = 40 V, V GS = 0 V
V DS = 40 V, V GS = 10 V,
I D = 100A
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
-
-
10170
1670
35
3025
137
56
25
28
2.4
13530
2220
-
-
178
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 40 V, I D = 100 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
47
66
87
41
104
142
184
92
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
223*
892
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 100 A
V GS = 0 V, V DD = 40 V, I SD = 100 A,
dI F /dt = 100 A/ μ s
-
-
-
-
80
112
1.3
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, I AS = 24.72 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 100 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDP027N08B Rev. C4
2
www.fairchildsemi.com
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