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| 型号： | FDN361BN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.4A SSOT3 |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 1.4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 193pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN361BNDKR |
Fe bruary 2009
FDN361BN
30V N-Channel, Logic Level, PowerTrench ? MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
x 1.4 A, 30 V.
R DS(ON) = 110 m : @ V GS = 10 V
R DS(ON) = 160 m : @ V GS = 4.5 V
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
D
S
x Low gate charge
x Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT TM -3 design for
superior thermal and electrical capabilities
x High performance trench technology for extremely
low R DS(ON)
D
G
S
SuperSOT -3
TM
G
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
r 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
1.4
A
– Pulsed
10
P D
Power Dissipation for Single Operation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
q C
Thermal Characteristics
R T JA
R T JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
q C/W
Package Marking and Ordering Information
Device Marking
361B
Device
FDN361BN
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2009 Fairchild Semiconductor Corporation
FDN361BN Rev A1(W)
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN363N | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN371N | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN372S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN372S_F095 | 制造商:Fairchild 功能描述:30V/16V, 40/50MO, NCH, SYNCFET |
| FDN372S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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