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参数资料
| 型号： | FDN358 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | P沟道增强模式的逻辑电平场效应晶体管 |
| 文件页数： | 4/4页 |
| 文件大小： | 85K |
| 代理商： | FDN358 |
FDN358P Rev.D
0
2
4
6
8
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
G
V = -5V
-10V
I = -1.5A
-15V
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.05
0.1
0.5
1
2
5
10
-
D
RDS(ON) LIMIT
A
T = 25°C
A
DC
1s
10s
100ms
10ms
1ms
V = -10V
SINGLE PULSE
R = 250°C/W
JA
0
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R =250° C/W
T = 25°C
θ
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 250 °C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Figure 11. Transient Thermal Response Curve
.
0.1
0.2
0.5
1
2
5
10
30
20
50
100
200
400
700
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| FDN358P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN359BN | N-Channel Logic Level PowerTrench TM MOSFET |
| FDN359 | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN359AN | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN360 | Single P-Channel PowerTrenchTM MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN358P | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN358P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN358P_G | 制造商:Fairchild 功能描述:Single Pch, Logic Level, Power |
| FDN358P_Q | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN358P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN358P Series 30V 125 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-3 |
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