参数资料
型号: FDP10AN06A0
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench MOSFET 60V, 75A, 10.5mз
中文描述: 12 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 5/11页
文件大小: 265K
代理商: FDP10AN06A0
2002 Fairchild Semiconductor Corporation
FDB10AN06A0 / FDP10AN06A0 Rev. A
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
0.1
1
10
50
3000
60
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
5
10
Q
g
, GATE CHARGE (nC)
15
20
25
30
V
G
,
V
DD
= 30V
I
D
= 75A
I
D
= 12A
WAVEFORMS IN
DESCENDING ORDER:
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