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参数资料
| 型号： | FDP2570 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 22 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 81K |
| 代理商： | FDP2570 |
FDP2570/FDB2570 Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= 75 V,
I
D
= 11 A
375
mJ
11
A
V
GS
= 0 V, I
D
= 250
μ
A
150
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
154
mV/
°
C
V
DS
= 120 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
2.6
4
V
Gate Threshold Voltage
–7
mV/
°
C
V
GS
= 10 V,
V
GS
= 6.0 V,
V
GS
= 10 V, I
D
= 11 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 10 V,
I
D
= 11 A
I
D
= 10 A
61
63
127
80
90
175
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 11 A
25
A
S
39
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1911
106
33
pF
pF
pF
V
DS
= 75 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
12
5
33
23
40
7
12
22
10
53
37
56
ns
ns
ns
ns
nC
nC
nC
V
DD
= 75 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 75 V,
V
GS
= 10 V
I
D
= 11 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
22
A
V
SD
V
GS
= 0 V,
I
S
= 11 A
(Note 2)
0.83
1.3
V
Notes:
1. Calculated continuous current based on maximum allowable junction temperature.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP2570_Q | 功能描述:MOSFET TO-220 N-CH 150V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP2572 | 功能描述:MOSFET TO-220 N-CH 150V 29A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 150V, 29A, TO-220AB |
| FDP2572_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 150V, 29A, 54m?? |
| FDP2572_Q | 功能描述:MOSFET TO-220 N-CH 150V 29A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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