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| 型号： | FDP2710 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 50A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 42.5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 101nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7280pF @ 25V |
| 功率 - 最大： | 260W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Device Marking
FDP2710
Device
FDP2710
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 μ A, T J = 25 ° C
I D = 250 μ A, Referenced to 25 ° C
V DS = 250V, V GS = 0V
V DS = 250V, V GS = 0V,T C = 125 ° C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
250
--
--
--
--
--
--
0.25
--
--
--
--
--
--
10
500
100
-100
V
V/ ° C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 25A
V DS = 10V, I D = 25A
3.0
--
--
4.0
36.3
63
5.0
42.5
--
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
--
--
--
5470
426
97
7280
570
146
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 125V, I D = 50A
V GS = 10V, R GEN = 25 Ω
(Note 4)
--
--
--
--
80
252
112
154
170
515
235
320
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 125V, I D = 50A
V GS = 10V
(Note 4)
--
--
--
78
34
18
101
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
50
150
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 50A
V GS = 0V, I S = 50A
dI F /dt =100A/ μ s
--
--
--
--
163
1.3
1.2
--
--
V
ns
μ C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I AS = 17A, V DD = 50V, R G = 25 Ω , Starting T J = 25 ° C
3. I SD ≤ 50A, di/dt ≤ 100A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Essentially Independent of Operating Temperature Typical Characteristics
?2007 Fairchild Semiconductor Corporation
FDP2710 Rev. C1
2
www.fairchildsemi.com
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