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参数资料
| 型号： | FDP39N20 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | DIODE ZENER SINGLE 350mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-23 3K/REEL |
| 中文描述： | 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 908K |
| 代理商： | FDP39N20 |
3
www.fairchildsemi.com
FDP39N20 Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperatue
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
レ
s Pulse Test
2. T
C
= 25
∩
∝
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250
レ
s Pulse Test
∝
I
D
,
V
GS
, Gate-Source Voltage [V]
0
25
50
75
100
125
0.04
0.06
0.08
0.10
0.12
0.14
V
GS
= 20V
V
GS
= 10V
Note : T
∝
J
= 25
R
D
ヘ
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
∩
Notes :
1. V
GS
= 0V
2. 250
レ
s Pulse Test
∝
25
∩
I
D
,
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
2000
4000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
∝
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
Q
G
, Total Gate Charge [nC]
30
40
50
60
0
2
4
6
8
10
12
V
DS
= 100V
V
DS
= 160V
V
DS
= 40V
Note : I
∝
D
= 39A
V
G
,
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP39N20_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FD-P40 | 制造商:Panasonic Electric Works 功能描述:M3 DIF. FLEXIBLE 2M FREE-CUT R4MM 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FDP4020 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor |
| FDP4020P | 功能描述:MOSFET P-Ch 2.5V Specified Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP4020P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
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