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参数资料
| 型号： | FDP39N20 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | DIODE ZENER SINGLE 350mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-23 3K/REEL |
| 中文描述： | 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 908K |
| 代理商： | FDP39N20 |
4
www.fairchildsemi.com
FDP39N20 Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
∝
1. V
GS
= 0 V
2. I
D
= 250
レ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
∝
1. V
GS
= 10 V
2. I
D
= 19.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
100 ms
DC
1 ms
10
μ
s
10 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
∝
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
10
20
30
40
I
D
,
T
C
, Case Temperature [
∩
]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
N otes :
1. Z
ヨ
JC
(t) = 0.5
∩
/W M ax.
2. D uty F actor, D =t
1
/t
2
3. T
JM
- T
C
= P
D M
* Z
ヨ
JC
(t)
∝
single pulse
D =0.5
0.02
0.01
0.2
0.05
0.1
Z
ヨ
J
(
t
1
, S quare W ave P ulse D uration [sec]
t
1
P
DM
t
2
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|---|---|
| FDP39N20_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
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| FDP4020P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
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