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参数资料
| 型号： | FDP5N60NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 4.5A TO-220-3 |
| 标准包装： | 50 |
| 系列： | UniFET-II™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 2.25A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 600pF @ 25V |
| 功率 - 最大： | 100W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
November 2013
FDP5N60NZ / FDPF5N60NZ
N-Channel UniFET TM II MOSFET
600 V, 4.5 A, 2.0 Ω
Features
? R DS(on) = 1.65 Ω (Typ.) @ V GS = 10 V, I D = 2.25 A
? Low Gate Charge (Typ. 10 nC)
? Low C rss (Typ. 5 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Improved Capability
? RoHS Compliant
Applications
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
? LCD / LED / PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP5N60NZ
600
FDPF5N60NZ
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
4.5
2.7
±25
4.5*
2.7*
V
A
I DM
Drain Current
- Pulsed
(Note 1)
18
18*
A
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
175
4.5
10
20
10
mJ
A
mJ
V/ns
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
100
0.8
33
0.27
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP5N60NZ
FDPF5N60NZ
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1.25
62.5
3.75
62.5
o
C/W
?2011 Fairchild Semiconductor Corporation
FDP5N60NZ / FDPF5N60NZ Rev. C2
1
www.fairchildsemi.com
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