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| 型号： | FDP6670AL |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 80A TO-220 |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.5 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 33nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2440pF @ 15V |
| 功率 - 最大： | 68W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
May 2003
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench ? MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
? 80 A, 30 V
R DS(ON) = 6.5 m ? @ V GS = 10 V
R DS(ON) = 8.5 m ? @ V GS = 4.5 V
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R DS(ON)
and fast switching speed.
? Critical DC electrical parameters specified at
elevated temperature
? High performance trench technology for extremely
low R DS(ON)
? 175 ° C maximum junction temperature rating
G
D
G
D
G
D
S
TO-220
FDP Series
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
80
A
– Pulsed
(Note 1)
240
P D
T J , T STG
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Junction Temperature Range
68
0.45
–65 to +175
W
W/ ° C
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.2
62.5
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDB6670AL
FDP6670AL
Device
FDB6670AL
FDP6670AL
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
? 2003 Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP6670AL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6670AS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDP6670AS_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDP6670AS_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDP6670S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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