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| 型号： | FDP80N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 80A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 74nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3190pF @ 25V |
| 功率 - 最大： | 176W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
November 2013
FDP80N06
N-Channel UniFET TM MOSFET
60 V, 80 A, 1 0 m ?
Features
? R DS(on) = 8.5 m ? (Typ.) @ V GS = 10 V, I D = 40 A
? Low G ate C harge (Typ. 57nC)
? Low C rss (Typ. 145pF)
? Fast S witching
? Improved dv/dt C apability
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? RoHS C ompliant
D
GD
S
Absolute Maximum Ratings
TO-220
T C = 25°C unless otherwise noted .
G
S
Symbol
Parameter
Ratings
Units
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
(T C = 25 o C)
- Derate above 25 o C
V DSS
V GSS
I D
I DM
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
60
±20
80
65
320
480
80
17.6
4.5
176
1.17
-55 to +175
300
V
V
A
A
mJ
A
mJ
V/ns
W
W/ o C
o C
o C
Thermal Characteristics
Symbol
Parameter
Ratings
Units
R θ JC
R θ JA
Thermal Resistance, Junction to Case , Max.
Thermal Resistance, Junction to Ambient , Max.
0.85
62.5
o
C/W
?2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDP8440 | MOSFET N-CH 40V 100A TO-220 |
| FDP8441 | MOSFET N-CH 40V 80A TO-220AB |
| FDP8443_F085 | MOSFET N-CH 40V TO-220AB-3 |
| FDP8447L | MOSFET N-CH 40V 12A TO-220 |
| FDP8860 | MOSFET N-CH 30V 80A TO-220AB |
相关代理商/技术参数 |
参数描述 |
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| FDP8440 | 功能描述:MOSFET 40V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8441 | 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8441_F085 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8442 | 功能描述:MOSFET 40V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8442_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 3.1m?? |
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