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| 型号： | FDP80N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 80A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 74nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3190pF @ 25V |
| 功率 - 最大： | 176W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Device Marking
FDP80N06
Device
FDP80N06
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
? BV DSS
/ ? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0V, T J = 25 o C
o
V DS = 60V, V GS = 0V
V DS = 48V, T C = 150 o C
V GS = ±20V, V DS = 0V
60
-
-
-
-
-
0.075
-
-
-
-
-
1
10
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 40A
V DS = 25V, I D = 40A
2.0
-
-
--
8.5
67
4.0
10
-
V
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V
f = 1MHz
-
-
-
2450
910
145
3190
1190
190
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
-
32
75
ns
t r
t d(off)
t f
Q g(tot)
Q gs
Q gd
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 30V, I D = 80A
R G = 25 ?
V DS = 48V, I D = 80A
V GS = 10V
(Note 4)
(Note 4)
-
-
-
-
-
-
259
136
113
57
15
24
528
282
236
74
-
-
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
80
320
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 80A
V GS = 0V, I SD = 80A
dI F /dt = 100A/ μ s
-
-
-
-
64
127
1.4
-
-
V
ns
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature .
2: L = 0.15mH, I AS = 80A, V DD = 50V, R G = 25 ? , Starting T J = 25°C .
3: I SD ≤ 80A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25°C .
4: Essentially i ndependent of o perating t emperature t ypical c haracteristics .
?2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
2
www.fairchildsemi.com
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