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| 型号： | FDP8030L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 80A TO220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 170nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 10500pF @ 15V |
| 功率 - 最大： | 187W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 其它名称： | FDP8030L-ND FDP8030LFS |
May 2013
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench ? MOSFET
General Description
Features
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
? 80 A, 30 V.
R DS(ON) = 0.0035 ? @ V GS = 10 V
R DS(ON) = 0.0045 ? @ V GS = 4.5 V
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
R DS(on) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
? Critical DC electrical parameters specified at
elevated temperature
? Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor
supply designs with higher overall efficiency.
? High performance trench technology for extremely
low R DS(ON)
? 175 ° C maximum junction temperature rating
G
D
G
D
G
D
S
TO-220
FDP Series
S
TO-263AB
FDB Series
S
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
80
A
– Pulsed
(Note 1)
300
P D
T J , T STG
T L
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
187
1.25
-65 to +175
275
W
W ° C
° C
° C
1/8” from case for 5 seconds
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.8
62.5
° C/W
° C/W
? 2012 Fairchild Semiconductor Corporation
FDP8030L/FDB8030L Rev C2(W)
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| FDP8030L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP80N06 | 功能描述:MOSFET 60V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8440 | 功能描述:MOSFET 40V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8441 | 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8441_F085 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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