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参数资料
| 型号： | FDP61N20 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 61A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 400 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 61A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 41 毫欧 @ 30.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3380pF @ 25V |
| 功率 - 最大： | 417W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
November 2013
FDP61N20
N-Channel UniFET TM MOSFET
200 V, 61 A, 41 m Ω
Features
? R DS(on) = 34 m Ω (Typ.) @ V GS = 10 V, I D = 30.5 A
? Low Gate Charge (Typ. 58 nC)
? Low C rss (Typ. 80 pF)
? 100% Avalanche Tested
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
GD
S
TO-220
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FDP61N20
200
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
61
38.5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
244
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1440
61
41.7
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
417
3.3
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP61N20
0.3
62.5
Unit
° C/W
?2005 Fairchild Semiconductor Corporation
FDP61N20 Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP61N20 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:MOSFET |
| FDP65N06 | 功能描述:MOSFET 60V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6644 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6644S | 功能描述:MOSFET 30V/16V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6670AL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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