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参数资料
| 型号： | FDP7030L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 80 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 112K |
| 代理商： | FDP7030L |
FDP7030BL/FDB7030BL Rev D1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
DD
= 15 V,
I
D
= 60 A
73
mJ
60
A
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
22
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
1
1.9
3
V
–5
mV/
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 30 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 10 V
V
DS
= 10V,
I
D
= 30 A
I
D
= 30 A
I
D
= 25 A
6.8
8.5
10.1
9
12
18
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
30
A
S
85
Dynamic Characteristics
C
iss
Input Capacitance
1760
pF
C
oss
Output Capacitance
440
pF
C
rss
R
G
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
185
1.2
pF
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
12
12
30
19
17
5.4
6.4
22
22
48
33
24
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 30 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
60
A
V
SD
V
GS
= 0 V,
I
S
= 30 A
(Note 1)
0.92
1.3
V
30
20
nS
nC
I
F
= 30 A,
d
iF
/d
t
= 100 A/μs
Notes:
1. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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