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参数资料
| 型号： | FDP75N08 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 75V N-Channel MOSFET |
| 中文描述： | 75 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | T0-220, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 680K |
| 代理商： | FDP75N08 |
2
www.fairchildsemi.com
FDP75N08 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 138
μ
H, I
AS
= 75A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
75A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP75N08
FDP75N08
TO-220
--
--
50
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
75
--
--
V
Breakdown Voltage Temperature Coefficient
I
D
= 250
μ
A, Referenced to 25°C
--
0.6
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 75 V, V
GS
= 0 V
V
DS
= 60 V, T
C
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
--
--
1
μ
A
--
--
10
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 37.5 A
V
DS
= 40 V, I
D
=37.5 A
(Note 4)
2.0
--
4.0
V
Static Drain-Source On-Resistance
--
9.5
11
m
Forward Transconductance
--
15
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
2940
3820
pF
Output Capacitance
--
680
890
pF
Reverse Transfer Capacitance
--
85
125
pF
t
d(on)
Turn-On Delay Time
V
DD
= 37.5 V, I
D
= 75A,
R
G
= 25
(Note 4, 5)
--
7.2
25
ns
t
r
Turn-On Rise Time
--
68
146
ns
t
d(off)
Turn-Off Delay Time
--
77
164
ns
t
f
Turn-Off Fall Time
--
93
196
ns
Q
g
Total Gate Charge
V
DS
= 60 V, I
D
= 75A,
V
GS
= 10 V
(Note 4, 5)
--
64
84
nC
Q
gs
Gate-Source Charge
--
16
--
nC
Q
gd
Gate-Drain Charge
--
24
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
75
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
300
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 75 A
V
GS
= 0 V, I
S
= 75 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
40
--
ns
Reverse Recovery Charge
--
75
--
nC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP75N08_0606 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:75V N-Channel MOSFET |
| FDP75N08A | 功能描述:MOSFET 75V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP79N15 | 功能描述:MOSFET 150V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP79N15_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |
| FDP7N50 | 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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