参数资料
型号: FDP75N08
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 75V N-Channel MOSFET
中文描述: 75 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: T0-220, 3 PIN
文件页数: 4/8页
文件大小: 680K
代理商: FDP75N08
4
www.fairchildsemi.com
FDP75N08 Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
= 10 V
2. I
D
= 37.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
DC
100ms
10ms
1ms
100
μ
s
10
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-SourceVoltage[V]
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
I
D
,
T
C
, Case Temperature [
o
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
1 . Z
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
N o te s :
(t) = 1 .1
0
C /W M a x .
J C
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .0 1
0 .2
0 .0 5
0 .1
Z
(
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
t
1
P
DM
t
2
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FDP75N08_0606 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:75V N-Channel MOSFET
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FDP79N15 功能描述:MOSFET 150V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP79N15_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET
FDP7N50 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube