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参数资料
| 型号： | FDP8441 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 80A TO-220AB |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.7毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 280nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 15000pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
Typical Characteristics
4000
1000
100
10us
100us
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1 ]
STARTING T J = 25 C
o
STARTING T J = 150 C
10
1
LIMITED
BY PACKAGE
OPERATION IN THIS SINGLE PULSE
AREA MAY BE T J = MAX RATED
1ms
10ms
10
o
0.1
1
LIMITED BY rDS (on)
T C = 25 o C
10
DC
100
1
0.01
0.1 1 10 100
1000 5000
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
120
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
160
120
V GS = 10V
V GS = 5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4.5V
T J = 175 C
80
o
80
V GS = 4V
T J = 25 o C
40
T J = -55 o C
40
V GS = 3.5V
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
1
2
3
4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
50
40
30
T J = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T J = 175 o C
1.8
1.6
1.4
1.2
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
20
1.0
10
0.8
I D = 80A
V GS = 10V
0
3
4 5 6 7 8 9
10
0.6
-80
-40 0 40 80 120 160
200
V GS , GATE TO SOURCE VOLTAGE ( V )
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
T J , JUNCTION TEMPERATURE ( o C )
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDP8441 Rev. C0
5
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDP8443_F085 | MOSFET N-CH 40V TO-220AB-3 |
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| FDP8860 | MOSFET N-CH 30V 80A TO-220AB |
| FDP8870_F085 | MOSFET N-CH 30V 156A TO-220 |
| FDP8874 | MOSFET N-CH 30V 114A TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP8441_F085 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8442 | 功能描述:MOSFET 40V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8442_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 3.1m?? |
| FDP8442_F085 | 功能描述:MOSFET 40V/80A/2.8ohm/N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8443 | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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