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参数资料
| 型号： | FDP8447L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ |
| 中文描述： | 50 A, 40 V, 0.0087 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 195K |
| 代理商： | FDP8447L |
F
N
www.fairchildsemi.com
2
2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
40
V
I
D
= 250
μ
A, referenced to 25°C
34
mV/°C
V
DS
= 32V,
V
GS
= ±20V, V
DS
= 0V
1
μ
A
nA
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
1
1.7
3
V
I
D
= 250
μ
A, referenced to 25°C
-6
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 14A
V
GS
= 4.5V, I
D
= 11A
V
GS
= 10V, I
D
= 14A, T
J
= 125°C
V
DD
= 5V, I
D
= 14A
7.7
8.9
12.1
74
8.7
11.2
13.7
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
1880
245
150
1.4
2500
325
225
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Gate to Source Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= 20V, I
D
= 14A,
V
GS
= 10V, R
GEN
= 6
9
7
18
14
45
10
49
27
ns
ns
ns
ns
nC
nC
nC
nC
28
4
35
19
4.7
6.2
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 20V,
I
D
= 14A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
V
GS
= 0V, I
S
= 14A (Note 2)
0.8
28
22
1.2
42
33
V
ns
nC
I
F
= 14A, di/dt = 100A/
μ
s
NOTES:
1. R
θ
JA
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
is guaranteed by design while R
is determined by the user’s board design.
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3.
Starting T
J
= 25°C, L = 1mH, I
AS
= 17.5A, V
DD
= 40V, V
GS
= 10V.
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相关代理商/技术参数 |
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|---|---|
| FDP8447L | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process |
| FDP8860 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8870_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8870_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 156A, 4.1mW |
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