参数资料
型号: FDP8447L
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ
中文描述: 50 A, 40 V, 0.0087 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 4/6页
文件大小: 195K
代理商: FDP8447L
F
N
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
Figure 7.
0
10
20
30
40
0
2
4
6
8
10
I
D
= 14A
V
DD
= 30V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
Gate Charge Characteristics
Figure 8.
0.1
1
10
10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
40
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
t
AV
, TIME IN AVALANCHE(ms)
1
10
100
1
10
300
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
20
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
o
C
)
150
0
20
40
60
80
Limited by Package
R
θ
JC
= 2.1
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
D
T
C
,
CASE TEMPERATURE
(
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
100
0.1
1
10
100
100ms
10ms
1ms
100us
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
300
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JC
= 2.1
o
C/W
T
C
= 25
o
C
Figure 12.
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
1000
SINGLE PULSE
R
θ
JC
= 2.1
o
C/W
T
C
= 25
o
C
50
V
GS
= 10V
P
(
P
)
,
P
t, PULSE WIDTH (s)
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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