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参数资料
| 型号： | FDP8896 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 30V, 92A, 5.9mз |
| 中文描述： | 80 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220AB, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 266K |
| 代理商： | FDP8896 |
2004 Fairchild Semiconductor Corporation
November 2004
FDP8896 Rev. A1
F
FDP8896
N-Channel PowerTrench
MOSFET
30V, 92A, 5.9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
Features
r
DS(ON)
= 5.9m
, V
GS
= 10V, I
D
= 35A
r
DS(ON)
= 7.0m
, V
GS
= 4.5V, I
D
= 35A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 62
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
92
85
16
A
A
A
A
Figure 4
74
80
0.53
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
1.88
62
o
C/W
o
C/W
Device Marking
FDP8896
FDP8896
Device
FDP8896
Package
TO-220AB
TO-220AB
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
FDP8896_NL (Note 4)
D
G
S
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ |
| FDP8896_F085 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET. (Transferred to alternate site. Please contact local reps fo RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8N50NZ | 功能描述:MOSFET UNIFET2 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8N50NZF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 7A, 1?? |
| FDP8N60ZU | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω |
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