- 您现在的位置：买卖IC网 > Datasheet目录424 > FDPF12N50FT (Fairchild Semiconductor)MOSFET N-CH 500V 11.5A TO-220F Datasheet资料下载
参数资料
| 型号： | FDPF12N50FT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 11.5A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1395pF @ 25V |
| 功率 - 最大： | 42W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Part Number
FDPF12N50FT
Top Mark
FDPF12N50FT
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V, T J = 25 o C
500
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 500 V, V GS = 0 V
V DS = 400 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
25 o C
-
-
-
-
0.5
-
-
-
-
10
100
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 6 A
V DS = 40 V, I D = 6 A
3.0
-
-
-
0.59
12
5.0
0.7
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
1050
135
11
1395
180
17
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400 V, I D = 11.5 A,
V GS = 10 V
(Note 4)
-
-
-
21
6
9
30
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250 V, I D = 11.5 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
21
45
50
35
50
100
110
80
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
11.5
46
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 11.5 A
V GS = 0 V, I SD = 11.5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
134
0.37
1.5
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 6.9 mH, I AS = 11.5 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 11.5 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2007 Fairchild Semiconductor Corporation
FDPF12N50FT Rev. C2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDPF12N50NZT | MOSFET N-CH 500V 11.5A TO-220F |
| FDPF12N50T | MOSFET N-CH 500V 11.5A TO-220F |
| FDPF12N50UT | MOSFET N-CH 500V TO-220F-3 |
| FDPF12N60NZ | MOSFET N-CH 600V TO-220F-3 |
| FDPF13N50FT | MOSFET N-CH 500V 12A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF12N50NZ | 功能描述:MOSFET UNIFET2 500V N-CH MOSFET SINGLE GAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF12N50NZT | 功能描述:MOSFET N-CH 500V 11.5A TO-220F RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:UniFET-II™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| FDPF12N50T | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF12N50UT | 功能描述:MOSFET 500V 10A N-Chan Ultra FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF12N60NZ | 功能描述:MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。