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参数资料
| 型号： | FDPF2710T |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.7 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 25 A, 250 V, 0.0425 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220F, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 503K |
| 代理商： | FDPF2710T |
4
www.fairchildsemi.com
FDPF2710T Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature
[
o
C
]
-100
-50
0
50
100
150
200
0
1
2
* Notes :
1. V
GS
= 10V
2. I
D
= 25A
r
D
,
D
T
J
, Junction Temperature [
o
C]
2.5
25
50
T
C
, Case Temperature
75
100
125
150
0
10
20
30
I
D
,
o
C
1
10
100
0.01
0.1
1
10
100
400
1ms
10 ms
DC
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
100
μ
s
D
D
Drain-Source Voltage, V
DS
[V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
θ
JC
(t) = 2.0
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.5
Single pulse
T
θ
J
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
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