- 您现在的位置：买卖IC网 > Datasheet目录425 > FDPF51N25YDTU (Fairchild Semiconductor)MOSFET N-CH 250V 51A TO-220F Datasheet资料下载
参数资料
| 型号： | FDPF51N25YDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 51A TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 51A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 25.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3410pF @ 25V |
| 功率 - 最大： | 38W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
November 2013
FDP51N25 / FDPF51N25
N-Channel UniFET TM MOSFET
250 V, 51 A, 60 m Ω
Features
? R DS(on) = 48 m Ω (Typ.) @ V GS = 10 V, I D = 25.5 A
? Low Gate Charge (Typ. 55 nC)
? Low C rss (Typ. 63 pF)
Applications
? PDP TV
? Lighting
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
GD
D
S
TO-220
G
S
TO-220F
G
S
TO-220F
Y-formed
G
Absolute Maximum Ratings T C = 25°C unless otherwise noted .
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDP51N25
FDPF51N25 /
FDPF51N25YDTU
250
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
51
30
51*
30*
A
A
I DM
Drain Current
- Pulsed
(Note 1)
204
204*
A
V GSS
Gate-Source voltage
± 30
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1111
51
32
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
320
3.7
38
0.3
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP51N25
0.39
62.5
FDPF51N25 /
FDPF51N25YDTU
3.3
62.5
Unit
° C/W
° C/W
?2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDPF52N20T | MOSFET N-CH 200V 52A TO-220F |
| FDPF5N50NZF | MOSFET N-CH 500V 4.2A TO-220F |
| FDPF5N50NZU | MOSFET N-CH 500V 3.9A TO-220F |
| FDPF5N50NZ | MOSFET N-CH 500V 4.5A TO220F |
| FDPF5N50TYDTU | MOSFET N-CH 500V TO-220FP-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF52N20T | 功能描述:MOSFET 200V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF55N06 | 功能描述:MOSFET 60V 55A N-Chan UniFET MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5A, 1.4ヘ |
| FDPF5N50FT | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50FT_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 4.5A, 1.55?? |
发布紧急采购，3分钟左右您将得到回复。