- 您现在的位置：买卖IC网 > Datasheet目录425 > FDPF5N50NZF (Fairchild Semiconductor)MOSFET N-CH 500V 4.2A TO-220F Datasheet资料下载
参数资料
| 型号： | FDPF5N50NZF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 4.2A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET-II™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.75 欧姆 @ 2.1A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 485pF @ 25V |
| 功率 - 最大： | 30W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
October 2013
FDPF5N50NZF
N-Channel UniFET TM II FRFET ? MOSFET ?
500 V, 4.2 A, 1.75 ?
Features
? R DS(on) = 1.57 ? (Typ.) @ V GS = 10 V, I D = 2.1 A
? Low Gate Charge (Typ. 9 nC)
? Low C rss (Typ. 4 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Improved Capability
? RoHS Compliant
Applications
? LCD/LED TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. The body diode’s reverse recovery performance of
UniFET II FRFET ? MOSFET has been enhanced by lifetime
control. Its t rr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
D
G
S
TO-220F
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain to Source Voltage
Parameter
FDPF5N50NZF
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±25
4.2*
2.5*
V
A
I DM
Drain Current
- Pulsed
(Note 1)
16*
A
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
165
4.2
7.8
20
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
30
0.24
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF5N50NZF
4.1
62.5
Unit
o C/W
?2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDPF5N50NZU | MOSFET N-CH 500V 3.9A TO-220F |
| FDPF5N50NZ | MOSFET N-CH 500V 4.5A TO220F |
| FDPF5N50TYDTU | MOSFET N-CH 500V TO-220FP-3 |
| FDPF5N50UT | MOSFET N-CH 500V TO-220F-3 |
| FDPF5N60NZ | MOSFET N-CH 600V 4.5A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF5N50NZU | 功能描述:MOSFET 500V N-Channel UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50NZU | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFETUNITFET 500V 3.9A TO-220F |
| FDPF5N50T | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50TYDTU | 功能描述:MOSFET 500V N-Chan MOSFET UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50UT | 功能描述:MOSFET 500V N-Channel FRFET, Ultra FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。