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参数资料
| 型号： | FDPF5N50NZF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 4.2A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET-II™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.75 欧姆 @ 2.1A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 485pF @ 25V |
| 功率 - 最大： | 30W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Device Marking
FDPF5N50NZF
Device
FDPF5N50NZF
Package
TO-220F
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 ? A, V GS = 0V, T C = 25 o C
500
-
-
V
? BV DSS
/ ? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 ? A, Referenced to
25 o C
-
0.5
-
V/ o C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V DS = 500V, V GS = 0V
V DS = 400V, V GS = 0V,T C = 125 o C
V GS = ±25V, V DS = 0V
-
-
-
-
-
-
10
100
±10
? A
? A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10V, I D = 2.1A
V DS = 20V, I D = 2.1A
3.0
-
-
-
1.57
4.2
5.0
1.75
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V
f = 1MHz
-
-
-
365
50
4
485
65
8
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400V I D = 4.2A
V GS = 10V
(Note 4)
-
-
-
9
2
4
12
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250V, I D = 4.2A
V GS = 10V, R GEN = 25 ?
(Note 4)
-
-
-
-
12
19
31
22
35
50
70
55
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
4.2
16
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 4.2A
V GS = 0V, I SD = 4.2A
dI F /dt = 100A/ ? s
-
-
-
-
87
0.15
1.5
-
-
V
ns
? C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 18.7mH, I AS = 4.2A, V DD = 50V, R G = 25 ? , Starting T J = 25 ? C
3. I SD ?? 4.2A, di/dt ? 200A/ ? s, V DD ? BV DSS , Starting T J = 25 ? C
4. Essentially Independent of Operating Temperature Typical Characteristics
?2012 Fairchild Semiconductor Corporation
FDPF5N50NZF Rev. C1
2
www.fairchildsemi.com
相关PDF资料 |
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|---|---|
| FDPF5N50NZU | MOSFET N-CH 500V 3.9A TO-220F |
| FDPF5N50NZ | MOSFET N-CH 500V 4.5A TO220F |
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| FDPF5N50UT | MOSFET N-CH 500V TO-220F-3 |
| FDPF5N60NZ | MOSFET N-CH 600V 4.5A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF5N50NZU | 功能描述:MOSFET 500V N-Channel UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50NZU | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFETUNITFET 500V 3.9A TO-220F |
| FDPF5N50T | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50TYDTU | 功能描述:MOSFET 500V N-Chan MOSFET UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50UT | 功能描述:MOSFET 500V N-Channel FRFET, Ultra FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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