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参数资料
| 型号： | FDPF52N20T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 52A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 52A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 49 毫欧 @ 26A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 63nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2900pF @ 25V |
| 功率 - 最大： | 38.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FDP5 2N20
FDPF5 2 N 20T
Top Mark
FDP52N20
FDPF52N20T
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V DS = 160 V, T C = 125 C
BV DSS
? BV DSS
/ ? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V, T J = 25 o C
I D = 250 μ A, Referenced to 25 o C
V DS = 200 V, V GS = 0 V
o
V GS = ±30 V, V DS = 0 V
200
-
-
-
-
-
0.2
-
-
-
-
-
1
10
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 26 A
V DS = 40 V, I D = 26 A
3.0
-
-
-
0.041
35
5.0
0.049
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25 V, V GS = 0 V
f = 1 MHz
-
-
-
-
2230
540
66
49
2900
700
100
63
pF
pF
pF
nC
Q gs
Q gd
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 160 V, I D = 52 A
V GS = 10 V
(Note 4)
-
-
19
24
-
-
nC
nC
Switching Characteristics
t d(on)
Turn-On Delay Time
-
53
115
ns
t r
t d(off)
t f
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 100 V, I D = 20 A
R G = 25 ?
(Note 4)
-
-
-
175
48
29
359
107
68
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
52
204
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 52 A
V GS = 0 V, I SD = 52 A
dI F /dt = 100 A/ μ s
-
-
-
-
162
1.3
1.5
-
-
V
ns
μ C
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 1.4 mH, I AS = 52 A, V DD = 50 V, R G = 25 ? , starting T J = 25°C.
3: I SD ≤ 52 A, di/dt ≤ 200 A/ μ s , V DD ≤ BV DSS , starting T J = 25°C.
4: Essentially independent of operating temperature typical characteristics.
?20 07 Fairchild Semiconductor Corporation
FDP52N20 / FDPF52N20T Rev. C1
2
www.fairchildsemi.com
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