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参数资料
| 型号： | FDPF5N50 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel MOSFET 500V, 5A, 1.4ヘ |
| 中文描述： | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220F, 3 PIN |
| 文件页数： | 2/10页 |
| 文件大小： | 270K |
| 代理商： | FDPF5N50 |
F
FDP5N50 / FDPF5N50 Rev. A
www.fairchildsemi.com
2
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Electrical Characteristics
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g(tot)
Total Gate Charge at 10V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
V
SD
Drain to Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 18mH, I
= 5A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
= 25°C
3: I
≤
5A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
, Starting T
J
= 25°C
4: Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
FDP5N50
FDPF5N50
Device
FDP5N50
FDPF5N50
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V, T
J
= 25
o
C
I
D
= 250
μ
A, Referenced to 25
o
C
500
-
-
V
-
0.6
-
V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125
o
C
V
GS
= ±30V, V
DS
= 0V
-
-
-
-
-
-
1
μ
A
10
±100
I
GSS
Gate to Body Leakage Current
nA
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 2.5A
V
DS
= 20V, I
D
= 2.5A
(Note 4)
3.0
-
-
-
5.0
1.4
-
V
Ω
S
1.15
4.3
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
480
66
5
11
3
640
88
8
15
-
pF
pF
pF
nC
nC
V
DS
= 400V, I
D
= 5A
V
GS
= 10V
(Note 4, 5)
-
5
-
nC
V
DD
= 250V, I
D
= 5A
R
G
= 25
Ω
(Note 4, 5)
-
-
-
-
13
22
28
20
36
54
66
50
ns
ns
ns
ns
-
-
-
-
-
-
-
-
5
A
A
V
ns
μ
C
20
1.4
-
-
V
GS
= 0V, I
SD
= 5A
V
GS
= 0V, I
SD
= 5A
dI
F
/dt = 100A/
μ
s
(Note 4)
300
1.8
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