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参数资料
| 型号： | FDPF8N60ZUT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V TO-220F-3 |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.35 欧姆 @ 3.25A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1265pF @ 25V |
| 功率 - 最大： | 34.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 全封装，成形引线 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
November 2013
FDPF8N60ZUT
N-Channel UniFET TM II Ultra FRFET TM MOSFET
600 V, 6.5 A, 1.35 Ω
Features
? R DS(on) = 1.15 Ω (Typ.) @ V GS = 10 V, I D = 3.25 A
? Low Gate Charge (Typ. 20 nC)
? Low C rss (Typ. 10 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? RoHS Compliant
Applications
? LCD/LED TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. UniFET II Ultra FRFET TM MOSFET has much superior
body diode reverse recovery performance. Its t rr is less than
50nsec and the reverse dv/dt immunity is 20V/nsec while nor-
mal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET II Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
D
G
S
TO-220F
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain to Source Voltage
Parameter
FDPF8N60ZUT
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
6.5*
3.9*
V
A
I DM
Drain Current
- Pulsed
(Note 1)
26*
A
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
420
6.5
13.5
20
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
34.5
0.28
W
W/ o C
C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF8N60ZUT
3.6
62.5
Unit
o C/W
?2012 Fairchild Semiconductor Corporation
FDPF8N60ZUT Rev. C2
1
www.fairchildsemi.com
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