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参数资料
| 型号： | FDQ7238S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench�� in SO-14 Package |
| 中文描述： | 11 A, 30 V, 0.0145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-14/11 |
| 文件页数： | 6/9页 |
| 文件大小： | 244K |
| 代理商： | FDQ7238S |
FDQ7238S Rev A1 (W)
Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7238S Q2.
TIME : 12nS/div
C
Figure 12. FDQ7238S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6644).
TIME : 12.5nS/div
C
Figure 13. Non-SyncFET (FDS6644) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage. This
will increase the power dissipated in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 25
o
C
T
A
= 100
o
C
T
A
= 125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
.
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDQ7244S | 功能描述:MOSFET USE 512-FDQ7238S Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDQ7698S | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR0301-10 | 制造商:MISC. CONNECTORS 功能描述: |
| FDR0301-24-00-285 | 制造商:MISC. CONNECTORS 功能描述: |
| FDR08CG08 | 制造商:Curtis Industries 功能描述: |
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