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参数资料
| 型号： | FDR4410 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 9300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 220K |
| 代理商： | FDR4410 |
April 1998
FDR4410
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDR4410
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Draint Current - Continuous
(Note 1a)
9.3
A
- Pulsed
40
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
FDR4410 Rev.C
9.3 A, 30 V. R
DS(ON)
= 0.013
@ V
GS
= 10 V
R
DS(ON)
= 0.020
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
Proprietary SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
The FDR4410 has been designed as a smaller, low cost
alternative to the popular Si4410DY.
The SuperSOT
TM
-8 package is 40% smaller than the SO-8
package.
The SuperSOT
TM
-8 advanced package design and
optimized pinout allow the typical power dissipation to be
similar to the bigger SO-8 package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
D
S
D
D
S
D
D
G
SuperSOT -8
pin
1
4410
1
5
6
7
8
4
3
2
1998 Fairchild Semiconductor Corporation
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR4420A | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR4420A_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDR4420A_Q | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR-50 | 制造商:Takachi Electric Industrial 功能描述:DIN[ {bNXF100mm 50mm 35mm Bulk |
| FDR5002 | 制造商:FCI 制造商全称:First Components International 功能描述:50.0 Amp DISH AUTO DIODES Low forward voltage drop |
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