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参数资料
| 型号： | FDR4420A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 224K |
| 代理商： | FDR4420A |
June 1998
FDR4420A
Single N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDR4420A
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Draint Current - Continuous
(Note 1a)
11
A
- Pulsed
40
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
FDR4420 Rev.D
11 A, 30 V. R
DS(ON)
= 0.009
@ V
GS
= 10 V,
R
DS(ON)
= 0.013
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge.
Small footprint 38% smaller than a standard SO-8.
Low profile package(1mm thick).
Power handling capability similar to SO-8.
The SuperSOT-8 family of N-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
These MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been tailored to
minimize the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where small package size is required
without compromising power handling and fast switching.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
1
5
6
7
8
4
3
2
D
S
D
D
S
D
D
G
SuperSOT -8
TM
pin
1
4420A
1998 Fairchild Semiconductor Corporation
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR4420A_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDR4420A_Q | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR-50 | 制造商:Takachi Electric Industrial 功能描述:DIN[ {bNXF100mm 50mm 35mm Bulk |
| FDR5002 | 制造商:FCI 制造商全称:First Components International 功能描述:50.0 Amp DISH AUTO DIODES Low forward voltage drop |
| FDR5004 | 制造商:FCI 制造商全称:First Components International 功能描述:50.0 Amp DISH AUTO DIODES Low forward voltage drop |
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