参数资料
型号: FDR4420A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: Single N-Channel, Logic Level, PowerTrenchTM MOSFET
中文描述: 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SUPERSOT-8
文件页数: 4/4页
文件大小: 224K
代理商: FDR4420A
FDR4420 Rev.D
Typical Electrical Characteristics
(continued)
Figure 9. Maximum Safe Operating Area.
0
10
20
Q , GATE CHARGE (nC)
30
40
50
60
0
2
4
6
8
10
V
G
I = 11A
V = 5V
15V
10V
Figure 7. Gate Charge Characteristics
.
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
5
20
100
I
D
1s
100ms
10s
DC
10ms
RDS(ON) LIMIT
1ms
100us
V = 10V
SINGLE PULSE
R = 135°C/W
T = 25°C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = 135°C/W
T - T = P * R JA
P(pk)
t
1
t
2
r
Figure 11.Transient Thermal Response Curve
.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
1
3
10
30
200
500
1000
2000
3000
5000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
Figure 8. Capacitance Characteristics.
0
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R = 135°C/W
T = 25°C
JA
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