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参数资料
| 型号： | FDR4420A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 224K |
| 代理商： | FDR4420A |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
20
mV /
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
T
J
= 55°C
10
μA
I
GSS
I
GSS
ON CHARACTERISTICS
(Note 2)
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold Voltage
R
DS(ON)
Static Drain-Source On-Resistance
Gate - Body Leakage Current
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
Gate Threshold Voltage Temp.Coefficient
I
D
= 250 μA, Referenced to 25
o
C
-6
mV /
o
C
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 11A
1
1.4
3
V
0.0075
0.009
T
J
=125°C
0.0125
0.016
V
GS
= 4.5 V, I
D
= 9 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 11 A
0.01
0.013
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
30
A
Forward Transconductance
25
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
2560
pF
Output Capacitance
560
pF
Reverse Transfer Capacitance
280
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 1
11
20
ns
Turn - On Rise Time
15
27
ns
Turn - Off Delay Time
25
40
ns
Turn - Off Fall Time
21
34
ns
Total Gate Charge
V
DS
= 15 V, I
D
= 9.3 A,
V
GS
= 5 V
23
33
nC
Gate-Source Charge
7
nC
Gate-Drain Charge
11
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
1.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.5 A
(Note 2)
0.7
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by design
while R
θ
CA
is determined by the user's board design. R
θ
JA
shown below for single device operation on FR-4 board in still air.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDR4420 Rev.D
b. 125
of 2oz copper.
O
C/W on a 0.026 in
2
of pad
a. 70
O
C/W on a 1 in
copper.
2
pad of 2oz
c. 135
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR4420A_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDR4420A_Q | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR-50 | 制造商:Takachi Electric Industrial 功能描述:DIN[ {bNXF100mm 50mm 35mm Bulk |
| FDR5002 | 制造商:FCI 制造商全称:First Components International 功能描述:50.0 Amp DISH AUTO DIODES Low forward voltage drop |
| FDR5004 | 制造商:FCI 制造商全称:First Components International 功能描述:50.0 Amp DISH AUTO DIODES Low forward voltage drop |
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