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参数资料
| 型号： | FDR858P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 261K |
| 代理商： | FDR858P |
FDR858P Rev.C
0
1
2
3
4
5
0
12
24
36
48
60
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
-4.5V
-4.0V
-6.0V
-3.5V
-3.0V
V = -10V
0
10
20
30
40
50
0.5
1
1.5
2
2.5
- I , DRAIN CURRENT (A)
D
V = -3.5 V
R
D
-10V
-4.5V
-4.0V
-7.0V
-5.5V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (° C)
D
R
D
V = -10V
I = -8.0A
Figure 3. On-Resistance Variation
with Temperature.
1
2
3
4
5
0
10
20
30
40
50
-V , GATE TO SOURCE VOLTAGE (V)
-
V = -5V
D
T = -55°C
125°C
25°C
Figure 5. Transfer Characteristics.
0
2
4
6
8
10
0
0.02
0.04
0.06
0.08
- V , GATE TO SOURCE VOLTAGE (V)
R
D
25° C
I = -4.0A
T = 125° C
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
50
-
S
25°C
-55°C
V = 0V
J
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR858P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR8702H | 功能描述:MOSFET N & PCh PowerTrench 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDRH20 | 制造商:TOKO 制造商全称:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
| FDRH2076-470M | 制造商:TOKO 制造商全称:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
| FDS 09 L 1000 | 制造商:Fischer Elektronik GmbH & Co KG 功能描述: |
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