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参数资料
| 型号： | FDR858P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 4/8页 |
| 文件大小： | 261K |
| 代理商： | FDR858P |
FDR858P Rev.C
Typical Electrical Characteristics
(continued)
Figure 9. Maximum Safe Operating Area.
0
8
16
24
32
40
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
G
V = -5V
-15V
I = -8A
-10V
Figure 7. Gate Charge Characteristics
.
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20 30
50
0.01
0.05
0.5
5
20
80
-
RDS(ON) LIMIT
D
DC
1s
100ms
10ms
1ms
10s
A
V = -10V
SINGLE PULSE
R = 135°C/W
T = 25°C
JA
100us
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = 135°C/W
T - T = P * R JA
P(pk)
t
1
t
2
r
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
-V , DRAIN TO SOURCE VOLTAGE (V)
1
3
10
15
30
200
500
1000
2000
4000
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics.
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R = 135°C/W
T = 25°C
JA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR858P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR8702H | 功能描述:MOSFET N & PCh PowerTrench 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDRH20 | 制造商:TOKO 制造商全称:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
| FDRH2076-470M | 制造商:TOKO 制造商全称:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
| FDS 09 L 1000 | 制造商:Fischer Elektronik GmbH & Co KG 功能描述: |
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